Gate-controlled heat generation in ZnO nanowire FETs
Pescaglini A, Biswas S, Cammi D, Ronning C, Holmes JD, Iacopino D (2017)
Publication Type: Journal article
Publication year: 2017
Journal
Book Volume: 19
Pages Range: 14042-14047
Journal Issue: 21
DOI: 10.1039/c7cp01356f
Abstract
Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all proof-of-concept devices proposed so far relied on the use of highly conductive nanomaterials, typically metals or highly doped semiconductors. In this article, we demonstrate a novel nanoheater architecture based on a single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO nanowires were incorporated into three-terminal devices whereby control of the nanowire temperature at a given source-drain bias was achieved by additional charge carriers capacitatively induced via the third gate electrode. Joule-heating selective ablation of poly(methyl methacrylate) deposited on ZnO nanowires was shown, demonstrating the ability of the proposed NW-FET configuration to enhance by more than one order of magnitude the temperature of a ZnO nanowire, compared to traditional two-terminal configurations. These findings demonstrate the potential of field-effect architectures to improve Joule heating power in nanowires, thus vastly expanding the range of suitable materials and applications for nanowire-based nanoheaters.
Involved external institutions
Ireland (IE)
Germany (DE)How to cite
APA:
Pescaglini, A., Biswas, S., Cammi, D., Ronning, C., Holmes, J.D., & Iacopino, D. (2017). Gate-controlled heat generation in ZnO nanowire FETs. Physical Chemistry Chemical Physics, 19(21), 14042-14047. https://doi.org/10.1039/c7cp01356f
MLA:
Pescaglini, Andrea, et al. "Gate-controlled heat generation in ZnO nanowire FETs." Physical Chemistry Chemical Physics 19.21 (2017): 14042-14047.
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