Blumroeder U, Hempel H, Fuechsel K, Hoyer P, Bingel A, Eichberger R, Unold T, Nolte S (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 214
Article Number: 1600590
Journal Issue: 5
The influence of near-surface crystal damage on carrier dynamics in silicon has been investigated with optical-pump THz-probe and THz emission studies. The surface damage is caused by a plasma process used for the fabrication of the ultrathin insulator within semiconductor–insulator–semiconductor (SIS) solar cells. The ion bombardment during the plasma process introduces a highly damaged subsurface region. Furthermore, the integration of positive interface charges leads to the formation of a depletion region that can be detected via the emitted THz radiation. The results are compared with classic I–U-characterization demonstrating that THz spectroscopy can be used as a supplementary tool for the investigation of process-induced surface damages.
APA:
Blumroeder, U., Hempel, H., Fuechsel, K., Hoyer, P., Bingel, A., Eichberger, R.,... Nolte, S. (2017). Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy. physica status solidi (a), 214(5). https://doi.org/10.1002/pssa.201600590
MLA:
Blumroeder, Ulrike, et al. "Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy." physica status solidi (a) 214.5 (2017).
BibTeX: Download