Modelling the refractive index behavior of Al, P-doped SiO2, fabricated by means of all-solution doping, in the vicinity of Al:P = 1:1

Kuhn S, Hein S, Hupel C, Nold J, Haarlammert N, Schreiber T, Eberhardt R, Tuennermann A (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Optical Materials Express Optical Society of America

Book Volume: 8

Pages Range: 1328-1340

Journal Issue: 5

DOI: 10.1364/OME.8.001328

Abstract

A novel and simple solution doping technique is used to explore the refractive index behavior of Al, P-doped SiO2 in the vicinity of the Al:P-ratio of 1:1 at low doping concentrations (0.4 up to 2.0 mol% Al2O3 and/or P2O5). It is found that even if Al:P = 1:1 is matched precisely, an index increase is observed. This is in contradiction to previous findings in the literature and the already sophisticated models need to be refined in this region. In the proposed model, an incomplete formation of AlPO4 is assumed and solves the contradiction. Furthermore, the presented model can be combined with previous literature models.

Involved external institutions

Fraunhofer-Institut für Angewandte Optik und Feinmechanik (IOF) / Fraunhofer Institute for Applied Optics and Precision Engineering

Germany (DE)

How to cite

APA:

Kuhn, S., Hein, S., Hupel, C., Nold, J., Haarlammert, N., Schreiber, T.,... Tuennermann, A. (2018). Modelling the refractive index behavior of Al, P-doped SiO2, fabricated by means of all-solution doping, in the vicinity of Al:P = 1:1. Optical Materials Express, 8(5), 1328-1340. https://dx.doi.org/10.1364/OME.8.001328

MLA:

Kuhn, S., et al. "Modelling the refractive index behavior of Al, P-doped SiO2, fabricated by means of all-solution doping, in the vicinity of Al:P = 1:1." Optical Materials Express 8.5 (2018): 1328-1340.

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