Flat Optical and Plasmonic Devices Using Area-Selective Ion-Beam Doping of Silicon

Salman J, Hafermann M, Rensberg J, Wan C, Wambold R, Gundlach BS, Ronning C, Kats MA (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Advanced Optical Materials Wiley

Book Volume: 6

Article Number: 1701027

Journal Issue: 5

DOI: 10.1002/adom.201701027

Abstract

Highly doped semiconductors are an emerging platform for plasmonic devices. Unlike in noble metals, the carrier concentration of semiconductors can vary by many orders of magnitude, resulting in a widely tunable range of plasma wavelengths spanning the mid-infrared and terahertz ranges. In this work, the potential of highly doped, ion-beam-patterned silicon is demonstrated as a fabrication-friendly platform for flat optical devices. Detailed characterization of the optical properties of silicon is performed at various doping levels, and diffractive optical elements and plasmonic frequency-selective surfaces that operate in the mid-to-far-infrared regime are realized. The resulting optical devices are monolithic, flat, resilient to thermal and physical damage, and can be easily integrated into other silicon-based platforms.

Involved external institutions

University of Wisconsin - Madison US United States (USA) (US) Friedrich-Schiller-Universität Jena DE Germany (DE)

How to cite

APA:

Salman, J., Hafermann, M., Rensberg, J., Wan, C., Wambold, R., Gundlach, B.S.,... Kats, M.A. (2018). Flat Optical and Plasmonic Devices Using Area-Selective Ion-Beam Doping of Silicon. Advanced Optical Materials, 6(5). https://doi.org/10.1002/adom.201701027

MLA:

Salman, Jad, et al. "Flat Optical and Plasmonic Devices Using Area-Selective Ion-Beam Doping of Silicon." Advanced Optical Materials 6.5 (2018).

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