Monolithic doped-semiconductor platform for optical devices in the infrared
Wambold R, Salman J, Hafermann M, Rensberg J, Wan C, Gundlach BS, Ronning C, Kats MA (2018)
Publication Type: Conference contribution
Publication year: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 415-417
Conference Proceedings Title: RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference
Event location: Mirimar Beach, FL, USA
ISBN: 9781538653494
DOI: 10.1109/RAPID.2018.8509030
Abstract
The ability to control light in the infrared is central to improving sensing, spectroscopy, communication, and directed-energy technologies. In this presentation, we demonstrate a platform for flat optical devices based on selectively doped semiconductors for monolithic diffractive, plasmonic, and gradient-index devices in the infrared.
Involved external institutions
Friedrich-Schiller-Universität Jena
Germany (DE)
University of Wisconsin - Madison
United States (USA) (US)
Germany (DE)
University of Wisconsin - Madison
United States (USA) (US)
How to cite
APA:
Wambold, R., Salman, J., Hafermann, M., Rensberg, J., Wan, C., Gundlach, B.S.,... Kats, M.A. (2018). Monolithic doped-semiconductor platform for optical devices in the infrared. In RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference (pp. 415-417). Mirimar Beach, FL, USA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Wambold, Raymond, et al. "Monolithic doped-semiconductor platform for optical devices in the infrared." Proceedings of the 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, Mirimar Beach, FL, USA Institute of Electrical and Electronics Engineers Inc., 2018. 415-417.
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