Femtosecond written buried waveguides in silicon

Matthaeus G, Kaemmer H, Lammers KA, Watanabe W, Nolte S (2018)

Publication Type: Conference contribution

Publication year: 2018

Journal

Proceedings of SPIE Society of Photo-optical Instrumentation Engineers (SPIE)

Publisher: SPIE

Book Volume: 10519

Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering

Event location: San Francisco, CA, USA

ISBN: 9781510615236

DOI: 10.1117/12.2289819

Abstract

The laser inscription of waveguides into the volume of crystalline silicon is presented. By using sub-ps laser pulses at a wavelength of 1552 nm highly localized light guiding structures with an average diameter ranging from 1-3 μm are achieved. The generated waveguides are characterized in terms of mode field distribution, damping losses and permanent refractive index modification. First investigations indicate an induced increase of the refractive index in the order of 10-3 to 10-2. Depending on the applied laser pulse energy single-mode to multimode like propagation behavior can be observed. At optimized processing parameters, the damping losses can be estimated below 3 dB/mm.

Involved external institutions

Friedrich-Schiller-Universität Jena DE Germany (DE) Ritsumeikan University / 立命館大学 JP Japan (JP)

How to cite

APA:

Matthaeus, G., Kaemmer, H., Lammers, K.A., Watanabe, W., & Nolte, S. (2018). Femtosecond written buried waveguides in silicon. In Costas P. Grigoropoulos, Beat Neuenschwander, Tetsuya Makimura, Gediminas Raciukaitis (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. San Francisco, CA, USA: SPIE.

MLA:

Matthaeus, G., et al. "Femtosecond written buried waveguides in silicon." Proceedings of the Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIII 2018, San Francisco, CA, USA Ed. Costas P. Grigoropoulos, Beat Neuenschwander, Tetsuya Makimura, Gediminas Raciukaitis, SPIE, 2018.

BibTeX: Download