Inscribing diffraction gratings in bulk silicon with nanosecond laser pulses

Chambonneau M, Richter D, Nolte S, Grojo D (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Optics Letters Optical Society of America

Book Volume: 43

Pages Range: 6069-6072

Journal Issue: 24

DOI: 10.1364/OL.43.006069

Abstract

Diffraction gratings are transversally inscribed in the bulk of monolithic crystalline silicon with infrared nanosecond laser pulses. Nanoscale material analyses of the modifications composing the gratings show that they rely on laser-induced stress associated with a positive refractive index change as confirmed with phase-shift interferometry. Characterizations of the optical properties of the gratings, including the diffraction angles and the efficiency of the different orders, are carried out. The refractive index change obtained from these measurements is in good agreement with the phase-shift measurements. Finally, we show that the grating diffraction efficiency depends strongly on the laser writing speed.

Involved external institutions

Aix-Marseille University / Aix-Marseille Université FR France (FR) Friedrich-Schiller-Universität Jena DE Germany (DE)

How to cite

APA:

Chambonneau, M., Richter, D., Nolte, S., & Grojo, D. (2018). Inscribing diffraction gratings in bulk silicon with nanosecond laser pulses. Optics Letters, 43(24), 6069-6072. https://doi.org/10.1364/OL.43.006069

MLA:

Chambonneau, Maxime, et al. "Inscribing diffraction gratings in bulk silicon with nanosecond laser pulses." Optics Letters 43.24 (2018): 6069-6072.

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