Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape

Katsoulis GP, Hadjipittas A, Bergues B, Kling MF, Emmanouilidou A (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Physical Review Letters American Physical Society

Book Volume: 121

Article Number: 263203

Journal Issue: 26

DOI: 10.1103/PhysRevLett.121.263203

Abstract

At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.

Involved external institutions

Ludwig-Maximilians-Universität (LMU) DE Germany (DE) University College London (UCL) GB United Kingdom (GB)

How to cite

APA:

Katsoulis, G.P., Hadjipittas, A., Bergues, B., Kling, M.F., & Emmanouilidou, A. (2018). Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape. Physical Review Letters, 121(26). https://doi.org/10.1103/PhysRevLett.121.263203

MLA:

Katsoulis, G. P., et al. "Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape." Physical Review Letters 121.26 (2018).

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