Light emission from direct bandgap hexagonal SiGe
Haverkort JE, Ren Y, Dijkstra A, Fadaly E, Reithmaier G, Busse D, Botti S, Verheijen MA, Finley J, Bakkers EP (2018)
Publication Type: Conference contribution
Publication year: 2018
Publisher: OSA - The Optical Society
Book Volume: Part F101-IPRSN 2018
Conference Proceedings Title: Optics InfoBase Conference Papers
Event location: Zurich, CHE
ISBN: 9781557528209
DOI: 10.1364/IPRSN.2018.ITu4I.5
Abstract
Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.
Involved external institutions
Eindhoven University of Technology / Technische Universiteit Eindhoven (TU/e)
Netherlands (NL)
Technische Universität München (TUM)
Germany (DE)
Friedrich-Schiller-Universität Jena
Germany (DE)
Netherlands (NL)
Technische Universität München (TUM)
Germany (DE)
Friedrich-Schiller-Universität Jena
Germany (DE)
How to cite
APA:
Haverkort, J.E., Ren, Y., Dijkstra, A., Fadaly, E., Reithmaier, G., Busse, D.,... Bakkers, E.P. (2018). Light emission from direct bandgap hexagonal SiGe. In Optics InfoBase Conference Papers. Zurich, CHE: OSA - The Optical Society.
MLA:
Haverkort, J. E.M., et al. "Light emission from direct bandgap hexagonal SiGe." Proceedings of the Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, CHE OSA - The Optical Society, 2018.
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