Polarization dependent multiphoton absorption in ZnO thin films
Hollinger R, Gupta D, Zapfl M, Karst M, Roeder R, Uschmann I, Reisloehner U, Kartashov D, Ronning C, Spielmann C (2020)
Publication Type: Journal article
Publication year: 2020
Journal
Book Volume: 53
Article Number: 055102
Journal Issue: 5
Abstract
We present a simple non-destructive approach for studying the polarization dependence of nonlinear absorption processes in semiconductors. The method is based on measuring the yield of the near UV photoluminescence as a function of polarization and intensity of femtosecond laser pulses. In particular, we investigated the polarization dependence of three photon laser absorption in intrinsic and Al-doped ZnO thin films. Both specimen show stronger emission for linearly polarized excitation compared to circular polarization. The ratios for the three-photon absorption coefficients are about 1.8 and independent of the doping. It is shown that Al-doped films have lower threshold for stimulated emission in comparison to the intrinsic films.
Involved external institutions
Germany (DE)How to cite
APA:
Hollinger, R., Gupta, D., Zapfl, M., Karst, M., Roeder, R., Uschmann, I.,... Spielmann, C. (2020). Polarization dependent multiphoton absorption in ZnO thin films. Journal of Physics D: Applied Physics, 53(5). https://doi.org/10.1088/1361-6463/ab5372
MLA:
Hollinger, Richard, et al. "Polarization dependent multiphoton absorption in ZnO thin films." Journal of Physics D: Applied Physics 53.5 (2020).
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