Microwave AC Resonance Induced Phase Change in Sb2Te3Nanowires
Tse PL, Tian F, Mugica-Sanchez L, Rueger O, Undisz A, Mothrath G, Ronning C, Takahashi S, Lu JG (2020)
Publication Type: Journal article
Publication year: 2020
Journal
Book Volume: 20
Pages Range: 8668-8674
Journal Issue: 12
DOI: 10.1021/acs.nanolett.0c03421
Abstract
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity, and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at ∼3 GHz in single Sb2Te3 nanowires. The resistance change by a total of 6-7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multistate information bit encoding and electrical addressability along a single nanowire, rendering technology advancement for neuro-inspired computing devices.
Involved external institutions
University of Southern California (USC)
United States (USA) (US)
Friedrich-Schiller-Universität Jena
Germany (DE)
United States (USA) (US)
Friedrich-Schiller-Universität Jena
Germany (DE)
How to cite
APA:
Tse, P.L., Tian, F., Mugica-Sanchez, L., Rueger, O., Undisz, A., Mothrath, G.,... Lu, J.G. (2020). Microwave AC Resonance Induced Phase Change in Sb2Te3Nanowires. Nano Letters, 20(12), 8668-8674. https://doi.org/10.1021/acs.nanolett.0c03421
MLA:
Tse, Pok Lam, et al. "Microwave AC Resonance Induced Phase Change in Sb2Te3Nanowires." Nano Letters 20.12 (2020): 8668-8674.
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