Towards a Hexagonal SiGe Semiconductor Laser

Tilburg MA, Dijkstra A, Fadaly EM, Lange VT, Verheijen MA, Suckert JR, Rodl C, Furthmuller J, Bechstedt F, Botti S, Busse D, Finley JJ, Bakkers EP, Haverkort JE (2020)

Publication Type: Conference contribution

Publication year: 2020

Journal

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2020-May

Conference Proceedings Title: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Event location: San Jose, CA, USA

ISBN: 9781943580767

Abstract

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

Involved external institutions

Eindhoven University of Technology / Technische Universiteit Eindhoven (TU/e) NL Netherlands (NL) Friedrich-Schiller-Universität Jena DE Germany (DE) Technische Universität München (TUM) DE Germany (DE)

How to cite

APA:

Tilburg, M.A., Dijkstra, A., Fadaly, E.M., Lange, V.T., Verheijen, M.A., Suckert, J.R.,... Haverkort, J.E. (2020). Towards a Hexagonal SiGe Semiconductor Laser. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. San Jose, CA, USA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Tilburg, M. A.J.V., et al. "Towards a Hexagonal SiGe Semiconductor Laser." Proceedings of the 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, CA, USA Institute of Electrical and Electronics Engineers Inc., 2020.

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