Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

DIjkstra A, Tilburg MA, Fadaly EM, Lange VT, Verheijen MA, Suckert JR, Rodl C, Furthmuller J, Bechstedt F, Botti S, Busse D, Finley JJ, Bakkers EP, Haverkort JE (2020)

Publication Type: Conference contribution

Publication year: 2020

Journal

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2020-May

Conference Proceedings Title: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Event location: San Jose, CA, USA

ISBN: 9781943580767

Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Involved external institutions

Eindhoven University of Technology / Technische Universiteit Eindhoven (TU/e) NL Netherlands (NL) Friedrich-Schiller-Universität Jena DE Germany (DE) Technische Universität München (TUM) DE Germany (DE)

How to cite

APA:

DIjkstra, A., Tilburg, M.A., Fadaly, E.M., Lange, V.T., Verheijen, M.A., Suckert, J.R.,... Haverkort, J.E. (2020). Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. San Jose, CA, USA: Institute of Electrical and Electronics Engineers Inc..

MLA:

DIjkstra, A., et al. "Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe." Proceedings of the 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, CA, USA Institute of Electrical and Electronics Engineers Inc., 2020.

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