1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis

Najafidehaghani E, Gan Z, George A, Lehnert T, Ngo GQ, Neumann C, Bucher T, Staude I, Kaiser D, Vogl T, Huebner U, Kaiser U, Eilenberger F, Turchanin A (2021)

Publication Type: Journal article

Publication year: 2021

Journal

Advanced Functional Materials Wiley-VCH Verlag

Book Volume: 31

Article Number: 2101086

Journal Issue: 27

DOI: 10.1002/adfm.202101086

Abstract

Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p–n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe2-WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self-powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated.

Involved external institutions

Friedrich-Schiller-Universität Jena DE Germany (DE) Universität Ulm DE Germany (DE) Leibniz-Institut für Photonische Technologien e.V. DE Germany (DE)

How to cite

APA:

Najafidehaghani, E., Gan, Z., George, A., Lehnert, T., Ngo, G.Q., Neumann, C.,... Turchanin, A. (2021). 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis. Advanced Functional Materials, 31(27). https://doi.org/10.1002/adfm.202101086

MLA:

Najafidehaghani, Emad, et al. "1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis." Advanced Functional Materials 31.27 (2021).

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