Najafidehaghani E, Gan Z, George A, Lehnert T, Ngo GQ, Neumann C, Bucher T, Staude I, Kaiser D, Vogl T, Huebner U, Kaiser U, Eilenberger F, Turchanin A (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 31
Article Number: 2101086
Journal Issue: 27
Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p–n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe
APA:
Najafidehaghani, E., Gan, Z., George, A., Lehnert, T., Ngo, G.Q., Neumann, C.,... Turchanin, A. (2021). 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis. Advanced Functional Materials, 31(27). https://doi.org/10.1002/adfm.202101086
MLA:
Najafidehaghani, Emad, et al. "1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis." Advanced Functional Materials 31.27 (2021).
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