Efficient Light Emission from Hexagonal SiGe

Fadaly EMT, Dijkstra A, Suckert JR, Ziss D, Tilburg MAJ, Mao C, Ren Y, Lange VTV, Koling S, Verheijen MA, Busse D, Rodl C, Furthmuller J, Bechstedt F, Stangl J, Finley JJ, Botti S, Haverkort JEM, Bakkers EPAM (2021)

Publication Type: Conference contribution

Publication year: 2021

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2021 Silicon Nanoelectronics Workshop, SNW 2021

Event location: Virtual, Online, JPN

ISBN: 9784863487819

DOI: 10.1109/SNW51795.2021.00024

Abstract

Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.

Involved external institutions

Eindhoven University of Technology / Technische Universiteit Eindhoven (TU/e) NL Netherlands (NL) Friedrich-Schiller-Universität Jena DE Germany (DE) Johannes Kepler Universität (JKU) Linz AT Austria (AT) Technische Universität München (TUM) DE Germany (DE)

How to cite

APA:

Fadaly, E.M.T., Dijkstra, A., Suckert, J.R., Ziss, D., Tilburg, M.A.J., Mao, C.,... Bakkers, E.P.A.M. (2021). Efficient Light Emission from Hexagonal SiGe. In 2021 Silicon Nanoelectronics Workshop, SNW 2021. Virtual, Online, JPN: Institute of Electrical and Electronics Engineers Inc..

MLA:

Fadaly, E. M. T., et al. "Efficient Light Emission from Hexagonal SiGe." Proceedings of the 26th Silicon Nanoelectronics Workshop, SNW 2021, Virtual, Online, JPN Institute of Electrical and Electronics Engineers Inc., 2021.

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