Unveiling Planar Defects in Hexagonal Group IV Materials
Fadaly EMT, Marzegalli A, Ren Y, Sun L, Dijkstra A, De Matteis D, Scalise E, Sarikov A, De Luca M, Rurali R, Zardo I, Haverkort JEM, Botti S, Miglio L, Bakkers EPAM, Verheijen MA (2021)
Publication Type: Journal article
Publication year: 2021
Journal
Book Volume: 21
Pages Range: 3619-3625
Journal Issue: 8
DOI: 10.1021/acs.nanolett.1c00683
Abstract
Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.
Involved external institutions
Eindhoven University of Technology / Technische Universiteit Eindhoven (TU/e)
Netherlands (NL)
Politecnico di Milano
Italy (IT)
Friedrich-Schiller-Universität Jena
Germany (DE)
Universität Basel
Switzerland (CH)
University of Milano-Bicocca / Università degli Studi di Milano-Bicocca, UNIMIB
Italy (IT)
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
Spain (ES)
Netherlands (NL)
Politecnico di Milano
Italy (IT)
Friedrich-Schiller-Universität Jena
Germany (DE)
Universität Basel
Switzerland (CH)
University of Milano-Bicocca / Università degli Studi di Milano-Bicocca, UNIMIB
Italy (IT)
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
Spain (ES)
How to cite
APA:
Fadaly, E.M.T., Marzegalli, A., Ren, Y., Sun, L., Dijkstra, A., De Matteis, D.,... Verheijen, M.A. (2021). Unveiling Planar Defects in Hexagonal Group IV Materials. Nano Letters, 21(8), 3619-3625. https://doi.org/10.1021/acs.nanolett.1c00683
MLA:
Fadaly, Elham M. T., et al. "Unveiling Planar Defects in Hexagonal Group IV Materials." Nano Letters 21.8 (2021): 3619-3625.
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