Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range
Koch A, Mei H, Rensberg J, Hafermann M, Salman J, Wan C, Wambold R, Blaschke D, Schmidt H, Salfeld J, Geburt S, Kats MA, Ronning C (2022)
Publication Type: Conference contribution
Publication year: 2022
Publisher: Optica Publishing Group (formerly OSA)
Conference Proceedings Title: Optics InfoBase Conference Papers
Event location: Maastricht, NLD
ISBN: 9781557528209
Abstract
We demonstrate heavy doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing, where we achieved heavily doped ZnO:Ga with free-carrier concentrations of ¡9.5 ¡¿ 1020 cm-3, which results in a plasma wavelength of 1.16 ¥ìm.
Involved external institutions
Friedrich-Schiller-Universität Jena
Germany (DE)
University of Wisconsin - Madison
United States (USA) (US)
Leibniz-Institut für Photonische Technologien e.V.
Germany (DE)
INNOVAVENT GmbH
Germany (DE)
Germany (DE)
University of Wisconsin - Madison
United States (USA) (US)
Leibniz-Institut für Photonische Technologien e.V.
Germany (DE)
INNOVAVENT GmbH
Germany (DE)
How to cite
APA:
Koch, A., Mei, H., Rensberg, J., Hafermann, M., Salman, J., Wan, C.,... Ronning, C. (2022). Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range. In Optics InfoBase Conference Papers. Maastricht, NLD: Optica Publishing Group (formerly OSA).
MLA:
Koch, Alexander, et al. "Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range." Proceedings of the Novel Optical Materials and Applications, NOMA 2022, Maastricht, NLD Optica Publishing Group (formerly OSA), 2022.
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