A photonic integrated circuit-based erbium-doped amplifier

Liu Y, Qiu Z, Ji X, Lukashchuk A, He J, Riemensberger J, Hafermann M, Wang RN, Liu J, Ronning C, Kippenberg TJ (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Science American Association for the Advancement of Science

Book Volume: 376

Pages Range: 1309-1313

Journal Issue: 6599

DOI: 10.1126/science.abo2631

Abstract

Erbium-doped fiber amplifiers revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient optical amplification in photonic integrated circuits but their use remains impractical as a result of insufficient output power. We demonstrate a photonic integrated circuit-based erbium amplifier reaching 145 milliwatts of output power and more than 30 decibels of smallsignal gain-on par with commercial fiber amplifiers and surpassing state-of-the-art III-V heterogeneously integrated semiconductor amplifiers.We apply ion implantation to ultralow-loss silicon nitride (Si3N4) photonic integrated circuits, which are able to increase the soliton microcomb output power by 100 times, achieving power requirements for low-noise photonic microwave generation and wavelength-division multiplexing optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of various fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.

Involved external institutions

École Polytechnique Fédérale de Lausanne (EPFL) CH Switzerland (CH) Friedrich-Schiller-Universität Jena DE Germany (DE)

How to cite

APA:

Liu, Y., Qiu, Z., Ji, X., Lukashchuk, A., He, J., Riemensberger, J.,... Kippenberg, T.J. (2022). A photonic integrated circuit-based erbium-doped amplifier. Science, 376(6599), 1309-1313. https://doi.org/10.1126/science.abo2631

MLA:

Liu, Yang, et al. "A photonic integrated circuit-based erbium-doped amplifier." Science 376.6599 (2022): 1309-1313.

BibTeX: Download