Mei H, Koch A, Wan C, Rensberg J, Zhang Z, Salman J, Hafermann M, Schaal M, Xiao Y, Wambold R, Ramanathan S, Ronning C, Kats MA (2022)
Publication Type: Journal article
Publication year: 2022
Book Volume: 11
Pages Range: 3923-3932
Journal Issue: 17
We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide (ZnO) and vanadium dioxide (VO2) as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a wide-bandgap semiconductor, ZnO, achieving carrier concentrations from 1018 cm-3 to 1020 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, VO2, locally modifying its insulator-to-metal transition (IMT) temperature by up to ∼25 °C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.
APA:
Mei, H., Koch, A., Wan, C., Rensberg, J., Zhang, Z., Salman, J.,... Kats, M.A. (2022). Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams. Nanophotonics, 11(17), 3923-3932. https://doi.org/10.1515/nanoph-2022-0050
MLA:
Mei, Hongyan, et al. "Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams." Nanophotonics 11.17 (2022): 3923-3932.
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