Bharuth-Ram K, Naidoo D, Adoons , Ronning C (2022)
Publication Type: Journal article
Publication year: 2022
Book Volume: 243
Article Number: 2
Journal Issue: 1
DOI: 10.1007/s10751-021-01785-9
A GaN thin film grown on sapphire substrate was implanted with 57Fe and 56Fe ions with energies of 60 keV, 160 keV and 370 keV and fluences selected to achieve a homogeneous concentration profile of approximately 2.6 at. % in the film. Implantation induced lattice damage was tracked with conversion electron Mössbauer spectroscopy (CEMS) after annealing the sample up to 900 °C. The spectral component due to Fe in lattice damage shows significant decrease on annealing above 700 °C, accompanied by a corresponding increase in the paramagnetic doublet component attributed to Fe substituting Ga in the wurtzite GaN lattice (Fe
APA:
Bharuth-Ram, K., Naidoo, D., Adoons, ., & Ronning, C. (2022). Fe implantation induced lattice defects and their recovery in GaN. Hyperfine Interactions, 243(1). https://dx.doi.org/10.1007/s10751-021-01785-9
MLA:
Bharuth-Ram, K., et al. "Fe implantation induced lattice defects and their recovery in GaN." Hyperfine Interactions 243.1 (2022).
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