Two-particle tight-binding description of higher-harmonic generation in semiconductor nanostructures
Peschel U, Thuemmler M, Lettau T, Gräfe S, Busch K (2022)
Publication Type: Journal article
Publication year: 2022
Journal
Book Volume: 106
Article Number: 245307
Journal Issue: 24
DOI: 10.1103/PhysRevB.106.245307
Abstract
We develop a quantum mechanical theory to describe the optical response of semiconductor nanostructures with a particular emphasis on higher-order harmonic generation. Based on a tight-binding approach we take all two-particle correlations into account thus describing the creation, evolution, and annihilation of electrons and holes. In the limiting case of bulk materials, we obtain the same precision as that achieved by solving the well-established semiconductor Bloch equations. For semiconducting structures of finite extent, we also incorporate the surrounding space thus enabling a description of electron emission. In addition, we incorporate different relaxation mechanisms such as dephasing and damping of intraband currents. Starting from precise material data as, e.g., from tight-binding parameters obtained from density-functional-theory calculations, we obtain a numerical description being by far less computationally challenging and resource-demanding as comparable ab initio approaches, e.g., those based on time-dependent density functional theory.
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Germany (DE)How to cite
APA:
Peschel, U., Thuemmler, M., Lettau, T., Gräfe, S., & Busch, K. (2022). Two-particle tight-binding description of higher-harmonic generation in semiconductor nanostructures. Physical Review B, 106(24). https://doi.org/10.1103/PhysRevB.106.245307
MLA:
Peschel, Ulf, et al. "Two-particle tight-binding description of higher-harmonic generation in semiconductor nanostructures." Physical Review B 106.24 (2022).
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