Annealing-Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy
Xiao T, Erfurt D, Felix R, Liao X, Frisch J, Abou-Ras D, Mazzio KA, Wilks RG, Schlatmann R, Bär M (2023)
Publication Type: Journal article
Publication year: 2023
Journal
DOI: 10.1002/admi.202202347
Abstract
Hydrogen-doped In2O3 (In2O3:H) is highly conductive while maintaining extraordinary transparency, thus making it a very attractive material for applications in optoelectronic devices such as (multijunction) solar cells or light-emitting devices. However, the corresponding metal/In2O3:H contacts may exhibit undesirably high resistances, significantly deteriorating device performance. To gain insight into the underlying efficiency-limiting mechanism, hard X-ray photoelectron spectroscopy is employed to in-situ monitor annealing-induced changes in the chemical structure of the Ag/In2O3:H interface system that is further complemented by ex-situ electron microscopy analyses and contact resistance measurements. The observed evolution of the Ag- and In-related photoelectron line intensities can be explained by significant intermixing across the Ag/In2O3:H interface. The corresponding lineshape broadening of the Ag 3d spectra is attributed to the formation of Ag2O and AgO, which becomes significant at temperatures above approximately 160 °C. However, after annealing to 300 °C, instead of the formation of an insulating AgOx interfacial layer, it is found i) In to be rather homogeneously distributed in the complete Ag/In2O3:H stack, ii) Ag diffusing into the In2O3:H, and iii) an improvement of the contact resistance rather than its often-reported deterioration.
Authors with CRIS profile
Involved external institutions
How to cite
APA:
Xiao, T., Erfurt, D., Felix, R., Liao, X., Frisch, J., Abou-Ras, D.,... Bär, M. (2023). Annealing-Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy. Advanced Materials Interfaces. https://doi.org/10.1002/admi.202202347
MLA:
Xiao, Ting, et al. "Annealing-Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy." Advanced Materials Interfaces (2023).
BibTeX: Download