Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy

Ohshima R, Klingler S, Dushenko S, Ando Y, Weiler M, Huebl H, Shinjo T, Goennenwein STB, Shiraishi M (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 110

Article Number: 182402

Journal Issue: 18

DOI: 10.1063/1.4983012

Abstract

We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For a fixed Py thickness, we observed an increase in the Gilbert damping parameter with decreasing resistivity of the Si channel. For a fixed Si doping concentration, we measured an increasing Gilbert damping parameter for decreasing Py layer thickness. No increase in the Gilbert damping parameter was found for Py/Si samples with an insulating interlayer. We attribute our observations to an enhanced spin injection into the low-resistivity Si by spin pumping.

Involved external institutions

Kyoto University / 京都大学 Kyōto daigaku

Japan (JP) Bayerische Akademie der Wissenschaften

Germany (DE)

How to cite

APA:

Ohshima, R., Klingler, S., Dushenko, S., Ando, Y., Weiler, M., Huebl, H.,... Shiraishi, M. (2017). Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy. Applied Physics Letters, 110(18). https://doi.org/10.1063/1.4983012

MLA:

Ohshima, Ryo, et al. "Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy." Applied Physics Letters 110.18 (2017).

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