Wang HI, Braatz ML, Richter N, Tielrooij KJ, Mics Z, Lu H, Weber NE, Muellen K, Turchinovich D, Klaeui M, Bonn M (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 121
Pages Range: 4083-4091
Journal Issue: 7
Controlling the type and density of charge carriers in graphene is vital for a wide range of applications of this material in electronics and optoelectronics. To date, chemical doping and electrostatic gating have served as the two most established means to manipulate the carrier density in graphene. Although highly effective, these two approaches require sophisticated graphene growth or complex device fabrication processes to achieve both the desired nature and the doping densities with generally limited dynamic tunability and spatial control. Here, we report a convenient and tunable optical approach to tune the steady-state carrier density and Fermi energy in graphene by photochemically controlling the concentration of adsorbed molecular O
APA:
Wang, H.I., Braatz, M.-L., Richter, N., Tielrooij, K.-J., Mics, Z., Lu, H.,... Bonn, M. (2017). Reversible Photochemical Control of Doping Levels in Supported Graphene. Journal of Physical Chemistry C, 121(7), 4083-4091. https://doi.org/10.1021/acs.jpcc.7b00347
MLA:
Wang, Hai I., et al. "Reversible Photochemical Control of Doping Levels in Supported Graphene." Journal of Physical Chemistry C 121.7 (2017): 4083-4091.
BibTeX: Download