Terahertz electrical writing speed in an antiferromagnetic memory

Olejnik K, Seifert T, Kaspar Z, Novak V, Wadley P, Campion RP, Baumgartner M, Gambardella P, Nemec P, Wunderlich J, Sinova J, Kuzel P, Mueller M, Kampfrath T, Jungwirth T (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Science Advances American Association for the Advancement of Science

Book Volume: 4

Article Number: eaar3566

Journal Issue: 3

DOI: 10.1126/sciadv.aar3566

Abstract

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.

Involved external institutions

Academy of Sciences of the Czech Republic (ASCR) / Akademie věd České republiky (AVČR) CZ Czech Republic (CZ) University of Nottingham GB United Kingdom (GB) Univerzita Karlova v Praze / Charles University in Prague CZ Czech Republic (CZ) Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI) DE Germany (DE) Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich CH Switzerland (CH)

How to cite

APA:

Olejnik, K., Seifert, T., Kaspar, Z., Novak, V., Wadley, P., Campion, R.P.,... Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3). https://doi.org/10.1126/sciadv.aar3566

MLA:

Olejnik, Kamil, et al. "Terahertz electrical writing speed in an antiferromagnetic memory." Science Advances 4.3 (2018).

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