Writing and reading antiferromagnetic Mn2Au by Neél spin-orbit torques and large anisotropic magnetoresistance

Bodnar SY, Smejkal L, Turek I, Jungwirth T, Gomonay O, Sinova J, Sapozhnik AA, Elmers HJ, Klaui M, Jourdan M (2018)


Publication Type: Journal article

Publication year: 2018

Journal

Book Volume: 9

Article Number: 348

Journal Issue: 1

DOI: 10.1038/s41467-017-02780-x

Abstract

Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Neél vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn2Au(001) thin films were generated by pulse current densities of 107 A/cm2. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than 6% is reproduced by ab initio transport calculations.

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How to cite

APA:

Bodnar, S.Y., Smejkal, L., Turek, I., Jungwirth, T., Gomonay, O., Sinova, J.,... Jourdan, M. (2018). Writing and reading antiferromagnetic Mn2Au by Neél spin-orbit torques and large anisotropic magnetoresistance. Nature Communications, 9(1). https://doi.org/10.1038/s41467-017-02780-x

MLA:

Bodnar, S. Yu., et al. "Writing and reading antiferromagnetic Mn2Au by Neél spin-orbit torques and large anisotropic magnetoresistance." Nature Communications 9.1 (2018).

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