Deterministic single-ion implantation of rare-earth ions for nanometer-resolution color-center generation

Groot-Berning K, Kornher T, Jacob G, Stopp F, Dawkins ST, Kolesov R, Wrachtrup J, Singer K, Schmidt-Kaler F (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Physical Review Letters American Physical Society

Book Volume: 123

Article Number: 106802

Journal Issue: 10

DOI: 10.1103/PhysRevLett.123.106802

Abstract

Single dopant atoms or dopant-related defect centers in a solid state matrix are of particular importance among the physical systems proposed for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. Here, using a deterministic source of single laser-cooled Pr+ ions, we present the fabrication of arrays of praseodymium color centers in yttrium-aluminum-garnet substrates. The beam of single Pr+ ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope, we determine a conversion yield into active color centers of up to 50% and realize a placement precision of 34 nm.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Universität Stuttgart DE Germany (DE) Universität Kassel DE Germany (DE)

How to cite

APA:

Groot-Berning, K., Kornher, T., Jacob, G., Stopp, F., Dawkins, S.T., Kolesov, R.,... Schmidt-Kaler, F. (2019). Deterministic single-ion implantation of rare-earth ions for nanometer-resolution color-center generation. Physical Review Letters, 123(10). https://doi.org/10.1103/PhysRevLett.123.106802

MLA:

Groot-Berning, Karin, et al. "Deterministic single-ion implantation of rare-earth ions for nanometer-resolution color-center generation." Physical Review Letters 123.10 (2019).

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