Toward wafer-scale diamond nano- and quantum technologies

Nelz R, Goerlitz J, Herrmann D, Slablab A, Challier M, Radtke M, Fischer M, Gsell S, Schreck M, Becher C, Neu E (2019)

Publication Type: Journal article

Publication year: 2019

Journal

APL Materials American Institute of Physics

Book Volume: 7

Article Number: 011108

Journal Issue: 1

DOI: 10.1063/1.5067267

Abstract

We investigate native nitrogen vacancy (NV) and silicon vacancy (SiV) color centers in a commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per μm 3 and moderate coherence time (T 2 = 5 μs) embedded in an ensemble of SiV centers. Using low temperature luminescence of SiV centers as a probe, we prove the high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to 100 mm, it offers the opportunity to up-scale diamond-based device fabrication.

Involved external institutions

Universität des Saarlandes (UdS) DE Germany (DE) Augsburg Diamond Technology GmbH DE Germany (DE) Universität Augsburg DE Germany (DE)

How to cite

APA:

Nelz, R., Goerlitz, J., Herrmann, D., Slablab, A., Challier, M., Radtke, M.,... Neu, E. (2019). Toward wafer-scale diamond nano- and quantum technologies. APL Materials, 7(1). https://doi.org/10.1063/1.5067267

MLA:

Nelz, Richard, et al. "Toward wafer-scale diamond nano- and quantum technologies." APL Materials 7.1 (2019).

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