Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe2O3/NiO/Pt epitaxial stacks

Dong BW, Baldrati L, Schneider C, Niizeki T, Ramos R, Ross A, Cramer J, Saitoh E, Klaeui M (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 114

Article Number: 102405

Journal Issue: 10

DOI: 10.1063/1.5080766

Abstract

We study the spin Hall magnetoresistance (SMR) in epitaxial γ-Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and γ-Fe2O3 layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.

Involved external institutions

University of Science and Technology Beijing (USTB) / 北京科技大学

China (CN) Johannes Gutenberg-Universität Mainz (JGU)

Germany (DE) Tohoku University

Japan (JP)

How to cite

APA:

Dong, B.-W., Baldrati, L., Schneider, C., Niizeki, T., Ramos, R., Ross, A.,... Klaeui, M. (2019). Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe2O3/NiO/Pt epitaxial stacks. Applied Physics Letters, 114(10). https://doi.org/10.1063/1.5080766

MLA:

Dong, Bo-Wen, et al. "Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe2O3/NiO/Pt epitaxial stacks." Applied Physics Letters 114.10 (2019).

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