Mechanism of neél order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
Baldrati L, Gomonay O, Ross A, Filianina M, Lebrun R, Ramos R, Leveille C, Fuhrmann F, Forrest TR, Maccherozzi F, Valencia S, Kronast F, Saitoh E, Sinova J, Klaeui M (2019)
Publication Type: Journal article
Publication year: 2019
Journal
Book Volume: 123
Article Number: 177201
Journal Issue: 17
DOI: 10.1103/PhysRevLett.123.177201
Abstract
We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Involved external institutions
Johannes Gutenberg-Universität Mainz (JGU)
Germany (DE)
Tohoku University
Japan (JP)
Diamond Light Source
United Kingdom (GB)
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Germany (DE)
Germany (DE)
Tohoku University
Japan (JP)
Diamond Light Source
United Kingdom (GB)
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Germany (DE)
How to cite
APA:
Baldrati, L., Gomonay, O., Ross, A., Filianina, M., Lebrun, R., Ramos, R.,... Klaeui, M. (2019). Mechanism of neél order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging. Physical Review Letters, 123(17). https://doi.org/10.1103/PhysRevLett.123.177201
MLA:
Baldrati, L., et al. "Mechanism of neél order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging." Physical Review Letters 123.17 (2019).
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