The silicon vacancy center in diamond

Becker JN, Neu E (2020)

Publication Type: Book chapter / Article in edited volumes

Publication year: 2020

Journal

Semiconductors and Semimetals Academic Press Inc

Publisher: Academic Press Inc.

Series: Semiconductors and Semimetals

Book Volume: 103

Pages Range: 201-235

DOI: 10.1016/bs.semsem.2020.04.001

Abstract

Over the past decade the negatively charged silicon vacancy (SiV−) center emerged as a promising competitor to the well-established nitrogen vacancy (NV−) due to its superior spectral properties such as narrow zero phonon line transitions and weak phonon sidebands. In this chapter we review recent advances in SiV fabrication and interfacing with nanophotonic structures. Moreover, we give a detailed introduction to the SiV− center's electronic structure, electron spin properties including a discussion of the processes limiting the center's spin coherence as well as an introduction to quantum control techniques compatible with the SiV−. We then discuss recent work combining these techniques to realize first coherent spin–photon interface and two-qubit quantum register using the SiV−. To conclude we review, recent work focusing on the neutral charge state of the SiV, potentially combining the favorable optical properties of the SiV− with the outstanding spin properties of the NV−.

Involved external institutions

Imperial College London / The Imperial College of Science, Technology and Medicine GB United Kingdom (GB) Universität des Saarlandes (UdS) DE Germany (DE)

How to cite

APA:

Becker, J.N., & Neu, E. (2020). The silicon vacancy center in diamond. In Christoph E. Nebel, Igor Aharonovich, Norikazu Mizuochi, Mutsuko Hatano (Eds.), (pp. 201-235). Academic Press Inc..

MLA:

Becker, Jonas Nils, and Elke Neu. "The silicon vacancy center in diamond." Ed. Christoph E. Nebel, Igor Aharonovich, Norikazu Mizuochi, Mutsuko Hatano, Academic Press Inc., 2020. 201-235.

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