Hysteresis in graphene nanoribbon field-effect devices

Tries A, Richter N, Chen Z, Narita A, Muellen K, Wang H, Bonn M, Klaeui M (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Physical Chemistry Chemical Physics Royal Society of Chemistry

Book Volume: 22

Pages Range: 5667-5672

Journal Issue: 10

DOI: 10.1039/d0cp00298d

Abstract

Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU)

Germany (DE) Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research

Germany (DE)

How to cite

APA:

Tries, A., Richter, N., Chen, Z., Narita, A., Muellen, K., Wang, H.,... Klaeui, M. (2020). Hysteresis in graphene nanoribbon field-effect devices. Physical Chemistry Chemical Physics, 22(10), 5667-5672. https://doi.org/10.1039/d0cp00298d

MLA:

Tries, Alexander, et al. "Hysteresis in graphene nanoribbon field-effect devices." Physical Chemistry Chemical Physics 22.10 (2020): 5667-5672.

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