Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Ross A, Lebrun R, Ulloa C, Grave DA, Kay A, Baldrati L, Kronast F, Valencia S, Rothschild A, Klaeui M (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Physical Review B American Physical Society

Book Volume: 102

Article Number: 094415

Journal Issue: 9

DOI: 10.1103/PhysRevB.102.094415

Abstract

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Universiteit Utrecht (UU) / Utrecht University NL Netherlands (NL) Technion - Israel Institute of Technology IL Israel (IL) Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE)

How to cite

APA:

Ross, A., Lebrun, R., Ulloa, C., Grave, D.A., Kay, A., Baldrati, L.,... Klaeui, M. (2020). Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films. Physical Review B, 102(9). https://doi.org/10.1103/PhysRevB.102.094415

MLA:

Ross, Andrew, et al. "Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films." Physical Review B 102.9 (2020).

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