Richter N, Chen Z, Tries A, Prechtl T, Narita A, Muellen K, Asadi K, Bonn M, Klaeui M (2020)
Publication Type: Journal article
Publication year: 2020
Book Volume: 10
Article Number: 1988
Journal Issue: 1
DOI: 10.1038/s41598-020-58660-w
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature that enables novel graphene-based electronics. Despite great progress, reliable and reproducible fabrication of single-ribbon field-effect transistors (FETs) is still a challenge, impeding the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on networks of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with large conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs to electrodes. Modeling the charge transport in the networks reveals that transport is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical GNR length. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism is a key step forward for functionalization of GNRs.
APA:
Richter, N., Chen, Z., Tries, A., Prechtl, T., Narita, A., Muellen, K.,... Klaeui, M. (2020). Charge transport mechanism in networks of armchair graphene nanoribbons. Scientific Reports, 10(1). https://dx.doi.org/10.1038/s41598-020-58660-w
MLA:
Richter, Nils, et al. "Charge transport mechanism in networks of armchair graphene nanoribbons." Scientific Reports 10.1 (2020).
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