Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments

Schreiber F, Meer H, Schmitt C, Ramos R, Saitoh E, Baldrati L, Klaeui M (2021)

Publication Type: Journal article

Publication year: 2021

Journal

Physical Review Applied American Physical Society

Book Volume: 16

Article Number: 064023

Journal Issue: 6

DOI: 10.1103/PhysRevApplied.16.064023

Abstract

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.

Involved external institutions

Tohoku University JP Japan (JP) Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE)

How to cite

APA:

Schreiber, F., Meer, H., Schmitt, C., Ramos, R., Saitoh, E., Baldrati, L., & Klaeui, M. (2021). Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments. Physical Review Applied, 16(6). https://doi.org/10.1103/PhysRevApplied.16.064023

MLA:

Schreiber, F., et al. "Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments." Physical Review Applied 16.6 (2021).

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