A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions
Reuben JR, Fey D, Lancaster S, Slesazeck S (2023)
Publication Type: Journal article
Publication year: 2023
Journal
Book Volume: 12
Article Number: 1163
Journal Issue: 5
DOI: 10.3390/electronics12051163
Abstract
Computing systems are becoming more and more power-constrained due to unconventional computing requirements like computing on the edge, in-sensor, or simply an insufficient battery. Emerging Non-Volatile Memories are explored to build low-power computing circuits, and adders are one among them. In this work, we propose a low-power adder using a Ferroelectric Tunnel Junction (FTJ). FTJs are two-terminal devices where the data is stored in the polarization state of the device. An FTJ-based majority gate is proposed, which uses a current-mode sensing technique to evaluate the majority of the inputs. By conditionally selecting between the majority and its complement, an XOR operation is implemented, thereby achieving full-adder functionality. Since FTJ-based majority operation is slow, a ternary adder architecture is used to compensate for the speed loss. The ternary adder proposed by us has two stages of full adder and requires O(1) time for n-bit addition. The proposed adder is verified using a simulation in CMOS 130 nm technology. A 32-bit addition can be achieved in 100 μs and consumes 0.78 pJ, which is very power efficient (7.8 nW). The proposed adder can be used in applications where power consumption is crucial, and speed is not a strict requirement.
Authors with CRIS profile
John Reuben Prabahar
Lehrstuhl für Informatik 3 (Rechnerarchitektur)
Dietmar Fey
Lehrstuhl für Informatik 3 (Rechnerarchitektur)
Involved external institutions
Germany (DE)How to cite
APA:
Reuben, J.R., Fey, D., Lancaster, S., & Slesazeck, S. (2023). A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions. Electronics, 12(5). https://doi.org/10.3390/electronics12051163
MLA:
Reuben, John Reuben, et al. "A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions." Electronics 12.5 (2023).
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