Rasche B, Isaeva A, Ruck M, Borisenko S, Zabolotnyy V, Buechner B, Koepernik K, Ortix C, Richter M, Van Den Brink J (2013)
Publication Type: Journal article
Publication year: 2013
Book Volume: 12
Pages Range: 422-425
Journal Issue: 5
DOI: 10.1038/nmat3570
Commonly, materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators has fundamentally challenged this dichotomy. In a topological insulator, the spin-orbit interaction generates a non-trivial topology of the electronic band structure dictating that its bulk is perfectly insulating, whereas its surface is fully conducting. The first topological insulator candidate material put forward - graphene - is of limited practical use because its weak spin-orbit interactions produce a bandgap of ∼ 0.01 K. Recent reexaminations of Bi
APA:
Rasche, B., Isaeva, A., Ruck, M., Borisenko, S., Zabolotnyy, V., Buechner, B.,... Van Den Brink, J. (2013). Stacked topological insulator built from bismuth-based graphene sheet analogues. Nature Materials, 12(5), 422-425. https://doi.org/10.1038/nmat3570
MLA:
Rasche, Bertold, et al. "Stacked topological insulator built from bismuth-based graphene sheet analogues." Nature Materials 12.5 (2013): 422-425.
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