Thermoelectric transport and Hall measurements of low defect Sb 2Te3 thin films grown by atomic layer deposition

Zastrow S, Gooth J, Boehnert T, Heiderich S, Toellner W, Heimann S, Schulz S, Nielsch K (2013)


Publication Type: Journal article

Publication year: 2013

Journal

Book Volume: 28

Article Number: 035010

Journal Issue: 3

DOI: 10.1088/0268-1242/28/3/035010

Abstract

Sb2Te3 has recently been an object of intensive research since its promising applicability in thermoelectric, in phase-change memory devices and as a topological insulator. In this work, we report highly textured Sb2Te3 thin films, grown by atomic layer deposition on Si/SiO2 wafers based on the reaction of SbCl 3 and (Et3Si)2Te. The low deposition temperature at 80 °C allows the pre-patterning of the Sb2Te 3 by standard lithography processes. A platform to characterize the Seebeck coefficient S, the electrical conductivity σ as well as the Hall coefficient RH on the same film has been developed. Comparing all temperature-dependent transport properties, three different conductive regions in the temperature range of 50-400 K are found. Room temperature values of S = 146 × 10-6 VK-1, σ = 104 Sm -1 and mobility M = 270.5 × 10-4 m2 V-1 s-1 are determined. The low carrier concentration in the range of n = 2.4 × 1018 cm-3 at 300 K quantifies the low defect content of the Sb2Te3 thin films. © 2013 IOP Publishing Ltd.

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How to cite

APA:

Zastrow, S., Gooth, J., Boehnert, T., Heiderich, S., Toellner, W., Heimann, S.,... Nielsch, K. (2013). Thermoelectric transport and Hall measurements of low defect Sb 2Te3 thin films grown by atomic layer deposition. Semiconductor Science and Technology, 28(3). https://doi.org/10.1088/0268-1242/28/3/035010

MLA:

Zastrow, S., et al. "Thermoelectric transport and Hall measurements of low defect Sb 2Te3 thin films grown by atomic layer deposition." Semiconductor Science and Technology 28.3 (2013).

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