Aharonov-Bohm oscillations and weak antilocalization in topological insulator Sb2Te3 nanowires

Hamdou B, Gooth J, Dorn A, Pippel E, Nielsch K (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 102

Article Number: 223110

Journal Issue: 22

DOI: 10.1063/1.4809826

Abstract

Recently, it has been theoretically predicted that Sb2Te 3 and related materials are 3D topological insulators, a phase of matter that has a bulk bandgap and gapless electronic surface states protected by time-reversal symmetry. We report on low temperature magnetoresistance measurements on single crystalline Sb2Te3 nanowires with different cross sectional areas and high surface-to-volume ratios, synthesized via catalytic growth. The observation of Aharonov-Bohm oscillations and weak antilocalization indicates the presence of topological surface states. © 2013 AIP Publishing LLC.

Involved external institutions

Universität Hamburg (UHH) DE Germany (DE) Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics DE Germany (DE)

How to cite

APA:

Hamdou, B., Gooth, J., Dorn, A., Pippel, E., & Nielsch, K. (2013). Aharonov-Bohm oscillations and weak antilocalization in topological insulator Sb2Te3 nanowires. Applied Physics Letters, 102(22). https://dx.doi.org/10.1063/1.4809826

MLA:

Hamdou, Bacel, et al. "Aharonov-Bohm oscillations and weak antilocalization in topological insulator Sb2Te3 nanowires." Applied Physics Letters 102.22 (2013).

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