Electrical transport in C-doped GaAs nanowires: Aurface effects

Casadei A, Schwender J, Russo-Averchi E, Rueffer D, Heiss M, Alarco-Llado E, Jabeen F, Ramezani M, Nielsch K, Fontcuberta I Morral A (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Physica Status Solidi-Rapid Research Letters Wiley-VCH Verlag

Book Volume: 7

Pages Range: 890-893

Journal Issue: 10

DOI: 10.1002/pssr.201307162

Abstract

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm2/Vs for doping concentrations lower than 3 × 1018 cm-3. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Involved external institutions

École Polytechnique Fédérale de Lausanne (EPFL) CH Switzerland (CH) Universität Hamburg (UHH) DE Germany (DE)

How to cite

APA:

Casadei, A., Schwender, J., Russo-Averchi, E., Rueffer, D., Heiss, M., Alarco-Llado, E.,... Fontcuberta I Morral, A. (2013). Electrical transport in C-doped GaAs nanowires: Aurface effects. Physica Status Solidi-Rapid Research Letters, 7(10), 890-893. https://dx.doi.org/10.1002/pssr.201307162

MLA:

Casadei, Alberto, et al. "Electrical transport in C-doped GaAs nanowires: Aurface effects." Physica Status Solidi-Rapid Research Letters 7.10 (2013): 890-893.

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