Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri- hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer
Singh B, Mehta BR, Varandani D, Govind , Narita A, Feng X, Muellen K (2013)
Publication Type: Journal article
Publication year: 2013
Journal
Book Volume: 113
Article Number: 203706
Journal Issue: 20
DOI: 10.1063/1.4807411
Abstract
This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O2- ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups. © 2013 AIP Publishing LLC.
Involved external institutions
Indian Institute of Technology (IIT), Delhi
India (IN)
National Physical Laboratory of India (NPL-INDIA)
India (IN)
Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research
Germany (DE)
India (IN)
National Physical Laboratory of India (NPL-INDIA)
India (IN)
Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research
Germany (DE)
How to cite
APA:
Singh, B., Mehta, B.R., Varandani, D., Govind, ., Narita, A., Feng, X., & Muellen, K. (2013). Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri- hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer. Journal of Applied Physics, 113(20). https://dx.doi.org/10.1063/1.4807411
MLA:
Singh, Bharti, et al. "Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri- hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer." Journal of Applied Physics 113.20 (2013).
BibTeX: Download