A design scheme for topological insulators based bonds, bands, symmetry and spin orbit coupling

Felser C, Muechler L, Chadov S, Fecher GH, Yan B, Kuebler J, Zhang HJ, Zhang SC (2013)

Publication Type: Conference contribution

Publication year: 2013

Journal

ECS Transactions Electrochemical Society

Publisher: Electrochemical Society Inc.

Book Volume: 50

Pages Range: 663-666

Conference Proceedings Title: ECS Transactions

Event location: USA

ISBN: 9781607683575

DOI: 10.1149/05009.0663ecst

Abstract

We report about a design scheme for topological insulators from the viewpoint of materials science or solid state chemistry. Topological insulators are a nice example for theory guided materials research. The electronic structure can be translated into the language of chemistry. The symmetry of the crystal- and the band structure, orbitals and spin orbit coupling determine whether a semiconductor is topologic or trivial. In this paper we will discuss the necessary and sufficient conditions for new TI materials, based in symmetry and bonding arguments. © The Electrochemical Society.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) Stanford University US United States (USA) (US)

How to cite

APA:

Felser, C., Muechler, L., Chadov, S., Fecher, G.H., Yan, B., Kuebler, J.,... Zhang, S.C. (2013). A design scheme for topological insulators based bonds, bands, symmetry and spin orbit coupling. In ECS Transactions (pp. 663-666). USA: Electrochemical Society Inc..

MLA:

Felser, Claudia, et al. "A design scheme for topological insulators based bonds, bands, symmetry and spin orbit coupling." Proceedings of the 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, USA Electrochemical Society Inc., 2013. 663-666.

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