Topological surface states of Bi2Se3 coexisting with Se vacancies

Yan B, Zhang D, Felser C (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Physica Status Solidi-Rapid Research Letters Wiley-VCH Verlag

Book Volume: 7

Pages Range: 148-150

Journal Issue: 1-2

DOI: 10.1002/pssr.201206415

Abstract

Although topological surface states are known to be robust against nonmagnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to surface defects. Taking Bi2Se3 as an example, we demonstrate that Se vacancies modify the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to the second quintuple layer and get separated from the vacancies. We simulated scanning tunnelling microscopy images to distinguish surfaces with Se and Bi terminations. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE)

How to cite

APA:

Yan, B., Zhang, D., & Felser, C. (2013). Topological surface states of Bi2Se3 coexisting with Se vacancies. Physica Status Solidi-Rapid Research Letters, 7(1-2), 148-150. https://doi.org/10.1002/pssr.201206415

MLA:

Yan, Binghai, Delin Zhang, and Claudia Felser. "Topological surface states of Bi2Se3 coexisting with Se vacancies." Physica Status Solidi-Rapid Research Letters 7.1-2 (2013): 148-150.

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