Fabrication and characterization of semiconducting half-Heusler YPtSb thin films

Shan R, Vilanova EV, Qin J, Casper F, Fecher GH, Jakob G, Felser C (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Physica Status Solidi-Rapid Research Letters Wiley-VCH Verlag

Book Volume: 7

Pages Range: 145-147

Journal Issue: 1-2

DOI: 10.1002/pssr.201206413

Abstract

The semiconducting half-Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p-type semiconducting YPtSb thin films were prepared by magnetron co-sputtering, using a specially designed target. YPtSb thin films grown on MgO (100) substrates at 600 °C showed a textured structure with the (111) plane parallel to the (001) plane of MgO. Electrical measurements showed that the resistivity of the YPtSb films decreases with increasing temperature, indicating semiconductor-like behavior. The carrier density was as high as 1.15 × 10²¹ cm^-3 at 300 K. The band gap of the YPtSb thin films was around 0.1-0.15 eV, which was in good agreement with the theoretical prediction and the value measured for bulk YPtSb. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU)

Germany (DE) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids

Germany (DE)

How to cite

APA:

Shan, R., Vilanova, E.V., Qin, J., Casper, F., Fecher, G.H., Jakob, G., & Felser, C. (2013). Fabrication and characterization of semiconducting half-Heusler YPtSb thin films. Physica Status Solidi-Rapid Research Letters, 7(1-2), 145-147. https://doi.org/10.1002/pssr.201206413

MLA:

Shan, Rong, et al. "Fabrication and characterization of semiconducting half-Heusler YPtSb thin films." Physica Status Solidi-Rapid Research Letters 7.1-2 (2013): 145-147.

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