Improving spin-transport by disorder

Chadov S, Kiss J, Felser C (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Advanced Functional Materials Wiley-VCH Verlag

Book Volume: 23

Pages Range: 832-838

Journal Issue: 7

DOI: 10.1002/adfm.201201693

Abstract

A new scheme dedicated to improving spin-transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half-metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn3Ga by substituting Mn with a 3d-transition metal. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE)

How to cite

APA:

Chadov, S., Kiss, J., & Felser, C. (2013). Improving spin-transport by disorder. Advanced Functional Materials, 23(7), 832-838. https://doi.org/10.1002/adfm.201201693

MLA:

Chadov, Stanislav, Janos Kiss, and Claudia Felser. "Improving spin-transport by disorder." Advanced Functional Materials 23.7 (2013): 832-838.

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