Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

Shan R, Ouardi S, Fecher GH, Gao L, Kellock A, Roche KP, Samant MG, Violbarbosa CE, Ikenaga E, Felser C, Parkin SSP (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 102

Article Number: 172401

Journal Issue: 17

DOI: 10.1063/1.4802795

Abstract

Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C 1 b structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states. © 2013 AIP Publishing LLC.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) IBM Research - Almaden US United States (USA) (US) Japan Synchrotron Radiation Research Institute (JASRI) JP Japan (JP)

How to cite

APA:

Shan, R., Ouardi, S., Fecher, G.H., Gao, L., Kellock, A., Roche, K.P.,... Parkin, S.S.P. (2013). Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100). Applied Physics Letters, 102(17). https://doi.org/10.1063/1.4802795

MLA:

Shan, Rong, et al. "Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)." Applied Physics Letters 102.17 (2013).

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