Electronic structure and nonsaturating magnetoresistance of superconducting Heusler topological insulators

Shekhar C, Nicklas M, Nayak AK, Ouardi S, Schnelle W, Fecher GH, Felser C, Kobayashi K (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 113

Article Number: 17E142

Journal Issue: 17

DOI: 10.1063/1.4799144

Abstract

We report the electronic structure and transport properties of the proposed Heusler topological insulators, YPtBi and LaPtBi, which show superconducting transition below 1 K. The measured valence band spectra of LaPtBi at 20 K exhibit a linear behavior close to the Fermi energy, where charge carriers behave as massless particles. The transport properties are similar to that of a gapless semiconductor with low carrier concentration. Furthermore, nonsaturating magnetoresistance is observed in the temperature range 2-300 K that shows linear behavior at high fields. © 2013 American Institute of Physics.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) National Institute of Materials Science (NIMS) JP Japan (JP)

How to cite

APA:

Shekhar, C., Nicklas, M., Nayak, A.K., Ouardi, S., Schnelle, W., Fecher, G.H.,... Kobayashi, K. (2013). Electronic structure and nonsaturating magnetoresistance of superconducting Heusler topological insulators. Journal of Applied Physics, 113(17). https://doi.org/10.1063/1.4799144

MLA:

Shekhar, Chandra, et al. "Electronic structure and nonsaturating magnetoresistance of superconducting Heusler topological insulators." Journal of Applied Physics 113.17 (2013).

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