Strong dependence of the tetragonal Mn2.1Ga thin film crystallization temperature window on seed layer

Li M, Jiang X, Samant MG, Felser C, Parkin SSP (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 103

Article Number: 032410

Journal Issue: 3

DOI: 10.1063/1.4815886

Abstract

For spintronic applications, such as magnetic memory and logic, magnetic thin films with high perpendicular magnetic anisotropy and spin polarization are needed. An attractive candidate material is the Heusler compound Mn 3-xGa (x varying from 0 to 2). We show that there is a correlation between the degree of crystallization of thin films of Mn3-xGa (x ∼ 0.9) and the magnitude of the perpendicular magnetic anisotropy. Moreover, we find that the crystallization temperature window varies with the seed layer on which the Mn3-xGa films are deposited. Seed layers of Pt, Cr, Ru, Mo and SrTiO3 were considered and the largest crystallization window was found for Pt(100) layers. © 2013 AIP Publishing LLC.

Involved external institutions

IBM Research - Almaden

United States (USA) (US) Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids

Germany (DE)

How to cite

APA:

Li, M., Jiang, X., Samant, M.G., Felser, C., & Parkin, S.S.P. (2013). Strong dependence of the tetragonal Mn2.1Ga thin film crystallization temperature window on seed layer. Applied Physics Letters, 103(3). https://doi.org/10.1063/1.4815886

MLA:

Li, Mingyang, et al. "Strong dependence of the tetragonal Mn2.1Ga thin film crystallization temperature window on seed layer." Applied Physics Letters 103.3 (2013).

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