Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films

Koehler A, Knez I, Ebke D, Felser C, Parkin SSP (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 103

Article Number: 162406

Journal Issue: 16

DOI: 10.1063/1.4825278

Abstract

We have investigated the magnetization and loss of anisotropy in ultrathin strained and unstrained Mn-Ga films at room temperature. Two Mn-Ga compositions, one of which is doped with Co, were grown on Cr buffered MgO (001) substrates. Films with a thickness below 10 nm are highly strained and the ratio c/a vs. thickness is depending on composition. The perpendicular magnetic anisotropy is shown to be drastically reduced with decreasing thickness and increasing strain. These findings should be considered when generalizing and downscaling results obtained from films > 20 nm. The strain can effectively be reduced by introducing an additional Pt buffer and thus maintaining a high perpendicular magnetic anisotropy for a thickness as low as 6 nm. © 2013 AIP Publishing LLC.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) IBM Research - Almaden US United States (USA) (US)

How to cite

APA:

Koehler, A., Knez, I., Ebke, D., Felser, C., & Parkin, S.S.P. (2013). Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films. Applied Physics Letters, 103(16). https://doi.org/10.1063/1.4825278

MLA:

Koehler, Albrecht, et al. "Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films." Applied Physics Letters 103.16 (2013).

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