Channel length dependent sensor response of Schottky-barrier FET pH sensors
Pregl S, Zorgiebel F, Baraban L, Cuniberti G, Mikolajick T, Richter C, Weber W (2013)
Publication Type: Conference contribution
Publication year: 2013
Publisher: IEEE Computer Society
Conference Proceedings Title: Proceedings of IEEE Sensors
Event location: USA
ISBN: 9781467346405
DOI: 10.1109/ICSENS.2013.6688311
Abstract
We present a multi channel Schottky-barrier (SB) field effect transistor (FET) based platform for chemical sensor applications and investigate its sensitivity on channel length. Designed transistors consist of parallel assembled bottom up grown silicon nanowires with a mean diameter of 20 nm. Focusing on investigations of devices with different channel lengths, we demonstrate that different optimum sensing regimes exist and they are determined by the device geometry. These target at different realizations and operation schemes. The sensitivities of the SB-FETs in linear and subthreshold regime are extracted from analysis of the pH response of silicon nanowire sensor devices. © 2013 IEEE.
Involved external institutions
Germany (DE)How to cite
APA:
Pregl, S., Zorgiebel, F., Baraban, L., Cuniberti, G., Mikolajick, T., Richter, C., & Weber, W. (2013). Channel length dependent sensor response of Schottky-barrier FET pH sensors. In Proceedings of IEEE Sensors. USA: IEEE Computer Society.
MLA:
Pregl, Sebastian, et al. "Channel length dependent sensor response of Schottky-barrier FET pH sensors." Proceedings of the 12th IEEE SENSORS 2013 Conference, USA IEEE Computer Society, 2013.
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